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SQS400EN
www.vishay.com
TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
20
16
12
V GS = 10 V thru 4 V
20
16
12
8
8
T C = 25 ° C
4
V GS = 3 V
4
T C = 125 ° C
0
0
T C = - 55 ° C
0
1
2
3
4
5
0
1 2 3 4
5
40
V D S - Drain-to- S ource Voltage (V)
Output Characteristics
0.05
V GS - G ate-to- S ource Voltage (V)
Transfer Characteristics
32
24
T C = 25 ° C
T C = - 55 ° C
0.04
0.03
16
T C = 125 ° C
0.02
V GS = 4.5 V
V GS = 10 V
8
0
0.01
0.00
0
4
8 12
16
20
0
4
8 12
16
20
1500
I D - Drain Current (A)
Transconductance
6
I D - Drain Current (A)
On-Resistance vs. Drain Current
I D = 16.4 A
1200
C i ss
5
4
V D S = 20 V
900
3
600
2
300
0
C r ss
C o ss
1
0
0
8 16 24 32
40
0
4
8 12 16
20
V D S - Drain-to- S ource Voltage (V)
Capacitance
Q g - Total G ate Charge (nC)
Gate Charge
S11-2129 Rev. D, 31-Oct-11
3
Document Number: 65362
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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